FIELD: vacuum-plasma technique.
SUBSTANCE: sources of metal atoms, mainly for deposition of thin metal films on metal or dielectric substrates in a vacuum chamber. The device for deposition of metal films consists of a vacuum chamber, a hollow cathode, a target, a substrate holder, a discharge power source connected to the anode with a positive pole and a cathode with a negative pole, as well as an additional bias voltage source. The hollow cathode of the device consists of two flat electrodes parallel to each other, placed relative to each other at a distance of 10 to 40 mm, the first electrode is made with the possibility of water cooling, while a target of the sputtered material is installed on its surface. Opposite the first electrode, a second electrode is placed parallel to the surface with an installed target made of a heat-resisting material, made of a refractory material in the form of a transparent mesh with a cell size from 10 μm to 5 mm, behind which a substrate holder is placed parallel to it at a distance of up to 100 mm. The walls of the vacuum chamber serve as the anode, and the additional bias voltage source is connected by a positive pole to the negative pole of the discharge power source, and by a negative pole to the first electrode of the cathode.
EFFECT: increase in the speed of coating and simplification of the device design.
2 dwg
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Authors
Dates
2023-06-07—Published
2022-12-09—Filed