METHOD OF MAKING PHOTODETECTOR MODULE BASED ON PbSe Russian patent published in 2014 - IPC H01L31/18 

FIELD: physics, optics.

SUBSTANCE: invention can be used in different optoelectronic equipment for detecting infrared radiation. The photodetector module based on PbSe, according to the invention, is a hybrid microassembly consisting of a photosensitive element in form of a PbSe-based line and a reading LSI chip (multiplexer), connected to each other by flip-chip method, wherein indium columns are deposited on terminals of solder pads of the photosensitive element which, besides layers of Cr, Pd, An, contain a sublayer of Cr and In, and mated with the indium columns deposited on the reading LSI chip to form an electrical and a mechanical bond.

EFFECT: invention makes assembly considerably easy and increases the efficiency of manufacture using a batch cold welding method, which in turn enables to make the photodetector module in form of a hybrid assembly and mount the reading LSI chip on the photosensitive element, reduce size and increase reliability.

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