FIELD: physics.
SUBSTANCE: invention relates to hybridisation of an infrared photodetector by a flip chip technique and can be used to align gaps between LSI and photosensitive element array (PEA) chips, which improves reliability of connection and resistance of the chip joint to thermal cycling, using the so-called indium "cushions" on both chips. The flip chip technique is supplemented with a new structural component - large-area indium microcontacts - "cushions", located on the periphery of the LSI and PEA and which enable to align gaps during hybridisation. The sequence of process operations in producing LSI and PEA with "cushions" remains standard. Only new structural components of the topology of LSI and PEA chips are added. The large area of the indium "cushions" protects the indium microcontacts from displacement and misalignment. The indium "cushions" of PEA fall into grooves between indium "cushions" of LSI. The gap becomes even and equal to the height of the indium "cushions".
EFFECT: high quality and reliability of interfacing.
6 dwg
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