METHOD OF ON-LINE INSPECTION OF THE DOCKING QUALITY Russian patent published in 2018 - IPC H01L21/66 

Abstract RU 2660020 C1

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor microelectronics, namely to an assembly technology of semiconductor devices, and can be used to hybridize reading LSI chips and the photosensitive element matrix (PSEM) by inverted mounting. To determine the quality of docking, an allowable gap between the crystals is calculated, a real gap between them is measured and they are compared. In this case, if the measured gap is greater than the calculated one, then the crystals are directed to an additional press to reduce the gap, if the measured gap is less than the calculated gap, the docking is considered satisfactory.

EFFECT: invention provides an improvement in the quality of the on-line inspection of crystal docking.

1 cl, 4 dwg

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RU 2 660 020 C1

Authors

Akimov Vladimir Mikhajlovich

Vasileva Larisa Aleksandrovna

Boltar Konstantin Olegovich

Klimanov Evgenij Alekseevich

Dates

2018-07-04Published

2017-06-05Filed