METHOD AND SYSTEM FOR READING THE STATE OF A MAGNETO-RESISTIVE MEMORY CELL WITH STT-MRAM SPIN TRANSFER Russian patent published in 2021 - IPC G11C11/56 G11C11/15 G11C13/00

Abstract RU 2746237 C1

FIELD: computer technology.

SUBSTANCE: method for reading the state of a magneto-resistive memory cell with STT-MRAM spin transfer consists in generating a V_rd reading signal during the T_rd time of reading the memory cell. The V_rd signal voltage in a given time range T₂ falls periodically below the set value of the stabilization pulse V_lo, and in a given time range T₁ reaches a V_hi value that is higher than the V_lo value.

EFFECT: reduced probability of reading perturbation.

14 cl, 11 dwg

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RU 2 746 237 C1

Authors

Khvalkovskij Aleksej Vasilevich

Nefedov Denis Alekseevich

Dates

2021-04-09—Published

2020-06-30—Filed