FIELD: electricity.
SUBSTANCE: in device for chemical-dynamical etching of germanium substrates including a platform with reaction vessels capable of orbital motion in horizontal plane the above platform is made as a chute with cylindrical baths, at that at the bath bottoms there are discs of inserts with horizontal plates placed with their substrate upwards, besides hub caps of the baths are capable to limit a thickness of the etchant layer on the plates surface and the bath bottom can be cooled by running water.
EFFECT: increased efficiency and simplification of design.
3 dwg
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