SEMICONDUCTOR INFRARED PHOTODIODE Russian patent published in 2014 - IPC H01L31/102 

FIELD: physics, optics.

SUBSTANCE: invention relates to semiconductor optoelectronics, specifically to infrared detectors, and can find application in spectrometers, detection and monitoring systems, security, fire-protection and communication systems. The infrared photodiode (1) has p and n regions (2, 3, 7) with current-conducting opaque contacts (4, 5) and an active region which is electrically connected to the p-n junction (6), wherein one or more contacts on the surface of the region which receives photons from the investigated object have a common perimeter, the value of which is selected from a range of values associated with the current spreading length. Contacts on the surface of the region receiving photons from the investigated object have elements with a repeating geometric shape, e.g. in form of a spiral or cellular structure. The active region of the photodiode is made of INAsSb, InAs, InGaAsSb, and the layer on the illuminated side is made of INAs_1-x-y Sb_xP_y (o<x<0.2, y=(2-2.2)·x) and has contacts from a series of metal layers Cr-Au_1-w-Zn_w-Ni-Au, wherein the Cr layer adjoins the surface of the p region, and w=0.01-0.2.

EFFECT: photodiode according to the invention provides high photosensitivity to radiation in the middle infrared region of the spectrum.

8 cl, 6 dwg, 3 ex