FIELD: electricity.
SUBSTANCE: microheater includes heating resistor, current inputs and contact areas as prolongation of the current inputs, with heating resistor in the form of three-layer meander, current inputs and contact areas joined in a single process cycle by method of microelectronic sputtering of all three layers: heat-resistant chemically passive conductive metal layer sputtered onto isolating substrate; heating resistor, current outputs and contact areas out of copper; heat-resistant chemically passive conductive metal, so that sputtered first and second layers of heat-resistant metal overlap with heating resistor, current inputs and contact areas, and the whole structure is protected by organic dielectric layer on top, where "windows" are made in contact area zones for connection of external electric conductors.
EFFECT: enhanced speed of temperature adjustment without deterioration of thermal shock strength, reliability and service life of microheater.
1 dwg
Title | Year | Author | Number |
---|---|---|---|
MICROSCOPIC HEATER | 1998 |
|
RU2170992C2 |
TEMPERATURE-SENSITIVE ELEMENT | 1999 |
|
RU2158419C1 |
MICROHEATER FOR SEMICONDUCTOR CHEMICAL GAS SENSOR | 2022 |
|
RU2797145C1 |
TEMPERATURE-SENSITIVE ELEMENT | 2002 |
|
RU2222790C2 |
METHOD OF MANUFACTURING MICROELECTRONIC UNIT | 2016 |
|
RU2645151C1 |
METHOD FOR MANUFACTURING MICROELECTRONIC UNIT | 2023 |
|
RU2804595C1 |
SEMICONDUCTOR SILICON STRUCTURE | 1996 |
|
RU2110117C1 |
DISPLACEMENT SENSOR | 2010 |
|
RU2449243C2 |
METHOD OF MANUFACTURING MICROELECTRONIC NODE | 2016 |
|
RU2651543C1 |
RESISTANCE THERMOMETER | 2012 |
|
RU2513654C2 |
Authors
Dates
2014-07-20—Published
2012-12-03—Filed