METHOD OF MANUFACTURING MATRIX PSE BASED ON GAAS Russian patent published in 2017 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to a semiconductor photodetector (PD) manufacturing technique and can be used to create matrix PD for various purposes. The method a manufacturing a matrix PSE based on GaAs, in which, according to the invention, the MPSE base region after hybridization with an LIC multiplexer is attenuated from 500 mcm to 20-40 mcm by means of an CMP comprising the processing of the MPSE plate by a rotating polishing pad, thinning is carried out first with the CMP from the thickness of 500 mcm to 40-50 mcm with a polishing composition containing (10.0÷45.0) g/l of the aqueous solution of sodium hypochlorite and (0.5÷3.0) g/l of the aqueous solution of sodium hydroxide, and then thinning of the base region is carried out using the CMP to the thickness of 20-40 microns in a polishing composition containing tartaric acid as a complexing agent at the concentration of 7.0÷70.0 vol. %, oxidant - hydrogen peroxide at the concentration of 7.0÷70.0 vol. %, lubricant - ethylene glycol at the concentration 5.0÷15.0 vol. %, the rest - deionized water.

EFFECT: flatness of the MPSE is not worse than 1 mcm while retaining the original geometry.

2 ex