FIELD: chemistry.
SUBSTANCE: invention relates to the technology of obtaining semiconductor materials and is intended for the controlled growing of threadlike crystals of semiconductors. The method includes the preparation of a semiconductor plate by the application of catalyst particles on its surface with the further placement of the prepared plate into a growth furnace, heating and creation of a longitudinal temperature gradient of 10-100°C/cm in the plate, after that precipitation of a crystallised substance from a vapour phase is realised in accordance with the scheme vapour→drop liquid →crystal, the molar ratio of the gas phase to hydrogen is set in the interval of 0.005-0.015, with the difference of temperature by the catalyst drop diameter being provided in the range of 0.15-0.4°C.
EFFECT: application of the invention will make it possible to facilitate the creation of planar thermometric and tensometric sensors, integrate threadlike crystals into planar technologies of microcircuit manufacturing.
6 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF POINT-LIKE SILICATE THREAD CRYSTALS GROWING | 2016 |
|
RU2653026C1 |
| METHOD TO PRODUCE EPITAXIAL FILIFORM NANOCRYSTALS OF SEMICONDUCTORS OF PERMANENT DIAMETER | 2009 |
|
RU2456230C2 |
| METHOD FOR OBTAINING THE SOLID REGULARLY LOCATED WHISKERS | 2017 |
|
RU2657094C1 |
| METHOD OF GROWING FILAMENTOUS NANOCRYSTALS OF SILICON DIOXIDE | 2017 |
|
RU2681037C2 |
| METHOD OF OBTAINING THREAD-LIKE NANOCRYSTALS OF SEMICONDUCTORS | 2013 |
|
RU2526066C1 |
| METHOD FOR GROWING SILICON WHISKER CRYSTALS | 2020 |
|
RU2750732C1 |
| METHOD FOR PRODUCING SODIUM FILAMENTARY NANOCRYSTALS | 2016 |
|
RU2648329C2 |
| PROCESS OF GROWING OF ORIENTED SYSTEMS OF WHISKERS AND GEAR FOR ITS IMPLEMENTATION ( VERSIONS ) | 1996 |
|
RU2099808C1 |
| METHOD OF GROWING ALLOYED SILICON NANOCRYSTAL WHISKERS | 2015 |
|
RU2617166C1 |
| BORING OF MONOCRYSTAL SILICON PLATES | 2014 |
|
RU2569551C2 |
