FIELD: chemistry.
SUBSTANCE: method of growing filamentous nanocrystals (FNC) SiO2 involves the preparation of a single-crystal silicon wafer by depositing fine particles of a metal catalyst to surface thereof, followed by placement in a growth furnace, heating and precipitation of silicon from a gas phase containing SiCl4, H2 and O2, according to the steam→liquid drop→crystal scheme with its simultaneous oxidation, the catalyst is chosen from a number of metals, which have quantitative values of the logarithm of the elasticity of dissociation 
for the reaction of formation of oxide 
, where Me is metal, O is oxygen, n and m are indices, at 1000 K, more - 36.1, the particles of the metal catalyst are chosen with diameters less than 100 nm, and the temperature of the growing process is set in the range of 1000–1300 K.
EFFECT: invention relates to the technology of semiconductor materials production.
1 cl, 5 ex
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