FIELD: nanotechnologies.
SUBSTANCE: invention relates to the technology of producing semiconductor nanomaterials. The method to produce epitaxial filiform nanocrystals of semiconductors of permanent diameter includes preparation of a semiconductor plate by application of nanodisperse catalyst particles onto its surface with subsequent placement of the specified plate into a growth furnace, heating and deposition of a crystallised substance from a gas phase according to the scheme vapour→drop liquid→crystal, at the same time the catalyst applied on the plate is created from a bicomponent alloy of metal and semiconductor of eutectic composition, and the crystallised substance is deposited from the gas phase under temperature that exceeds the eutectics temperature by the minimum.
EFFECT: invention provides for an opportunity to produce epitaxial semiconductor filiform nanocrystals without narrowing initial sections near bases.
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