METHOD FOR GROWING SILICON WHISKER CRYSTALS Russian patent published in 2021 - IPC C30B29/62 C30B29/06 C30B25/02 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to a technology for producing semiconductor materials. The method for growing silicon whisker crystals includes preparing a silicon wafer by applying catalyst particles from a two-component metal-silicon alloy of eutectic composition to its surface, followed by placing it in a growth furnace, heating, feeding hydrogen and silicon tetrachloride into the gas phase, and precipitating silicon from the gas phase according to the scheme: vapor → liquid droplet → crystal at a temperature minimally exceeding the temperature of the eutectic. In this case, an inert gas is additionally fed into the gas phase, a constant value of the ratio of the molar volumes of inert gas and hydrogen n is set, where n≥0.01. The catalyst is selected from gold, platinum, palladium and silver.

EFFECT: silicon whisker crystals of constant diameter.

1 cl, 1 dwg, 6 ex