METHOD OF OBTAINING THREAD-LIKE NANOCRYSTALS OF SEMICONDUCTORS Russian patent published in 2014 - IPC C30B29/62 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: method includes the preparation of a silicon wafer by the application of nanodisperse catalyst particles on its surface with further placement into the growth furnace, heating and precipitation of the crystallised substance from the gas phase by scheme vapour→drop liquid→crystal, with the silicon wafer before the application of the catalyst particles and placement of a substrate into the growth furnace being doped with phosphorus to a specific resistance of 0.008-0.018 Ohm·cm and subjected to anodic treatment for not longer than 5 min with illumination of halogen lamp in a mixture of a 48% solution of HF and C₂H₅OH (96%) in a ratio of 1:1, with a density of anodisation current being supported at the level not lower than 10 mA/cm², and the catalyst nanoparticles being applied by electron-beam sputtering of not more than 2 nm thick metal film.

EFFECT: possibility of obtaining fine semiconductor thread-like nanocrystals with a diameter less than 10 nm, evenly distributed on the surface of the substrate and having high surface density.

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