METHOD OF GROWING ALLOYED SILICON NANOCRYSTAL WHISKERS Russian patent published in 2017 - IPC C30B29/06 C30B29/62 C30B31/06 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of producing semiconductor nanomaterials by growing alloyed silicon nanocrystal whiskers on silicon substrates by the scheme vapour→liquid drop→crystal (VLC). The method includes preparing a semiconductor plate by applying catalyst particles to its surface with the subsequent placement in a growth furnace, heating, deposition of crystallizable material from a gas phase containing a precursor SiCl₄ and alloying compounds PCl₃coming from the fluid source, and growing crystals at the initial, main, and final stages of growth. Growing the crystals is performed successively from two fluid sources. The quantitative value of the molar ratio of [PCl₃]/[SiCl₄], equal to m in the first source used at the initial and final stages of growth, is selected from the interval m, larger or equal to 0.01; the molar quantitative ratio of [PCl₃]/[SiCl₄] in the second source used at the initial stage of growth is set as m equal to 0.

EFFECT: invention provides the possibility of obtaining alloyed nanocrystal whiskers of Si, having an increased level of alloying in the initial and final sections of the crystal (structure n - n-n-), and allows to create mesoscopic electrical connections conductors with linear volt-ampere characteristics.

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