SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/316 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of manufacturing technology of semiconductor devices, in particular to the technology of manufacturing field-effect transistors with reduced defects. In the semiconductor manufacturing method, the gate oxide is formed at a temperature of 1,060 °C by introducing into the oxidizing environment trichlorethylene according to the following scheme: first, carrying out the oxidation with a stream of oxygen (dry) 100 cm³/min for 5 min, then oxidation with oxygen flow (dry) 1,000 cm³/min and introduction of trichlorethylene into the oxidizing environment at a flow rate of 40–50 cm³/min for 60 min, followed by oxidation with a stream of oxygen (dry) 1,000 cm³/min for 15 min and heat treatment in nitrogen at 625 °C for 15 min.

EFFECT: invention provides for the reduction of defectiveness, ensuring manufacturability, improving the parameters of the instruments, improving the quality and increasing the percentage of yield.

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