SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/316 

FIELD: instrument making.

SUBSTANCE: invention relates to the semiconductor devices production technology, particularly to the field-effect transistors with low leakage currents production technology. Proposed is the semiconductor device manufacturing method by the under gate oxide layer formation at a temperature of 1,200 °C for 14 minutes in the dried oxygen stream in the presence of trichlorethylene, with subsequent annealing for 10 minutes in the nitrogen stream, which allows to increase the usable instruments yield and improve their reliability.

EFFECT: reducing leakage current, ensuring manufacturability, improving the structures parameters, increase in the quality and increase in the usable yield percentage.

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