METHOD OF MAKING RADIATION-RESISTANT SEMICONDUCTOR DEVICE Russian patent published in 2025 - IPC H01L23/552 

FIELD: electric elements.

SUBSTANCE: use for making a transistor with low defect density and high radiation resistance. Essence of the invention consists in the fact that the radiation-resistant semiconductor device manufacturing method includes the active regions formation, the gate oxide application, wherein after application of gate oxide layer of multilayer resist is formed, consisting of lower layer with thickness of 1 mcm, intermediate layer of refractory metal of tungsten with thickness of 300 nm by high-frequency sputtering at rate of 1 nm/s in atmosphere (Ar+N₂) and upper layer of electron resist with thickness of 300 nm.

EFFECT: providing the possibility of reducing values of density of defects, increasing radiation resistance, improving parameters of devices, improving quality and increasing percentage of serviceable devices.

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