MULTIINPUT LOGIC GATE OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DECODER STRUCTURE Russian patent published in 2017 - IPC H03K19/00 G11C29/00 

FIELD: information technology.

SUBSTANCE: multiinput logic gate of complementary metal-oxide-semiconductor decoder structure is given, consisting of OR-NO static elements and AND-NO static elements connected to each other in a chain of alternating elements so that OR-NO elements outputs are connected to inputs of AND-NO elements subsequent in the chain, AND-NO elements outputs are connected to inputs of OR-NO elements subsequent in the chain. Multiinput logic gate is fitted with compensating transistors with electronic conductivity channels and compensating transistors with hole conduction channels. Drain areas of each compensating transistor are placed on integrated circuit chip regarding to stock areas of transistors with channels of same conductivity as each preceding element in the chain at a distance providing a simultaneous influence of single nuclear particle to the said transistor areas.

EFFECT: improved noise immunity of multiinput logic gate under influence of a single nuclear particle.

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