MICROWAVE PLASMA REACTOR FOR SYNTHETIC DIAMOND MATERIAL Russian patent published in 2018 - IPC H01J37/32 

FIELD: technological processes.

SUBSTANCE: invention relates to a microwave plasma reactor for manufacturing synthetic diamond material using chemical vapor deposition techniques. Device comprises a plasma chamber defining the resonator to support the primary microwave resonance mode with a frequency f of the fundamental microwave resonance mode, a plurality of microwave sources associated with the plasma chamber, for the generation and supply of microwave radiation with the total microwave power P_T in a plasma chamber, a system of gas ducts for supplying technological gases to the plasma chamber and their removal therefrom. Also provided the presence of a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting the substrate, on which a synthetic diamond material must be deposited in use. Wherein a plurality of microwave sources are configured to input at least 30 % of the total microwave power P_T into the plasma chamber at the frequency f of the fundamental microwave resonance mode. At least some of the plurality of microwave sources are solid-state microwave sources.

EFFECT: technical result is the stimulation of CVD-deposition of diamonds with a combination of energy efficiency, increased growth rate, growth area and purity of the product obtained.

20 cl, 2 dwg