FIELD: microelectronics.
SUBSTANCE: semiconductor structure includes a base including spaced bit lines and spaced semiconductor channels, wherein the bit lines extend in a first direction, wherein the semiconductor channels are located on portions of the top surfaces of the bit lines, each semiconductor channel includes the first area, the second area and the third area arranged sequentially in a direction perpendicular to the upper surfaces of the bit lines; dielectric layers located between adjacent bit lines and on the side walls of semiconductor channels; gate electrodes surrounding the dielectric layers in the second region and extending in the second direction, the first direction being different from the second direction; layers of a chemical compound of a metal with a semiconductor located on the upper surfaces of the semiconductor channels; diffusion barrier layers at least surrounding the side walls of the metal-semiconductor chemical compound layers; and insulating layers located between adjacent semiconductor channels on the same bit line and insulating gate electrodes and dielectric barrier layers located on each dielectric layer from gate electrodes and dielectric barrier layers located on dielectric layers adjacent to each dielectric layer.
EFFECT: invention improves the electrical characteristics of the semiconductor structure.
10 cl, 17 dwg
