HIGH-VOLTAGE LIGHT-EMITTING DEVICE Russian patent published in 2015 - IPC H01L33/36 

FIELD: electricity.

SUBSTANCE: in light-emitting device containing light-emitting elements placed at the common insulating substrate and separated by gaps each of the above elements includes epitaxial structure contains in-series, in direction of epitaxial growth, layer of n-type conductivity, active layer with p-n-transition and layer of p-type conductivity, as well as metal n-contact pad to the layer of n-type conductivity placed in recession shaped in epitaxial structure at the level of n-type conductivity and the first metal layer applied on top of the layer of p-type conductivity. At least for part of the light-emitting elements the layer of n-type conductivity of one light-emitting element is coupled electrically to the layer of p-type conductivity of the neighbouring light-emitting element with their in-series electrical connection, according to the invention the metal contact pad to the layer of n-type conductivity of each light-emitting element is shaped as extended narrow strip oriented along its two opposite sides and placed in the central part of the specified cross-section so that end parts of the above strip are placed with a gap in regard to the other two opposite sides of the above cross-section, at that the device comprises an insulating layer placed in each light-emitting element on top of the first metal layer and covering lateral surface of the recession shaped in the epitaxial structure for placement of the metal contact pas to the layer of n-type conductivity and also covering surface of gaps separating the light-emitting elements, and the second metal layer placed on top of the insulating layer and contacting in each light-emitting element with the layer of n-type conductivity in the recession shaped in epitaxial structure with formation of the metal contact pad to the layer of n-type conductivity, at that in each light-emitting element in the insulating layer there is a grove forming a reach-through window, at which location the first and second metal layers contact with each other, and in the second metal layer at the section of the light-emitting element placed close to the above groove there is discontinuity length the whole surface of the element, and the above discontinuity is located so that the layer of n-type conductivity of one light-emitting element is coupled electrically to the layer of p-type conductivity of the neighbouring light-emitting element.

EFFECT: improved efficiency of high-voltage light-emitting device.

2 dwg