PROCESS OF FORMATION OF INTEGRATED CIRCUITS OF MICROCIRCUITS WITH SCHOTTKY DIODES HAVING VARIOUS HEIGHT OF POTENTIAL BARRIER Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: process includes formation of passive and active elements in monosilicon substrate of n type, uncovering of contact windows in dielectric coat, application of layer of silicide-forming metal and formation of silicide in contact windows, application of barrier and conductive layers with subsequent formation of contact electrodes and interconnections, simultaneous uncovering of contact windows to regions of formation of ohmic and rectifying contacts. Ion implantation of acceptor impurity with dose 2•10¹²-6•10¹² cm^-2. is carried out into contact windows in region of formation of high-barrier Schottky diodes before application of silicide-forming metal. Titanium is used as silicide-forming metal, layer of disilicide is formed in regions of ohmic and rectifying contacts with simultaneous electric activation of acceptor impurity in regions of formation of high-barrier Schottky diodes. EFFECT: improved quality and reliability of microcircuits, increased economic efficiency of process due to improvement of parameters of Schottky diodes and avoidance of usage of noble metal. 4 cl