FORMING IRREVERSIBLE STATE IN SINGLE-BIT CELL HAVING FIRST MAGNETIC TUNNEL JUNCTION AND SECOND MAGNETIC TUNNEL JUNCTION Russian patent published in 2015 - IPC G11C17/16 

Abstract RU 2553087 C2

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A method of forming an irreversible state in a single-bit cell, comprising applying programming voltage to a first magnetic tunnel junction (MTJ) of a single-bit cell without applying programming voltage to a second MTJ of the single-bit cell to form an irreversible state in the single-bit cell; and determining the irreversible state by comparing a first value read from the first MTJ and received at the first input of a differential amplifier with a second value read from the second MTJ and received at the second input of the differential amplifier, wherein the first value corresponds to the first voltage of a first bit line connected to the first MTJ, and the second value corresponds to the second voltage of a second bit line connected to the second MTJ.

EFFECT: enabling high-speed programming of a single-bit cell.

34 cl, 7 dwg

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RU 2 553 087 C2

Authors

Rao Khari M.

Kim Dzung Pill

Kang Seung Kh.

Chzhu Sjaochun'

Kim Tae Khiun

Li Kangkho

Li Sja

Khsu Vakh Nam

Khao Ujan

Sukh Dzungvon

Juj Nikolas K.

Novak Mehtt'Ju Majkl

Millendorf Stiven M.

Ashkenazi Asaf

Dates

2015-06-10Published

2011-08-03Filed