PHOTOELECTRIC CONVERTER OF NARROW-BAND RADIATION Russian patent published in 2023 - IPC H01L31/101 

FIELD: semiconductor optoelectronics.

SUBSTANCE: photoelectric converter of narrow-band radiation includes a frontal wide-gap layer of p-AlGaAs, a photoactive layer of n-GaAs, three additional undoped layers of n-Al_xGa_1-xAs, in which the percentage (x₁) of AlAs in the in the first additional layer adjacent to photoactive layer p-GaAs smoothly increases from zero to x₁=(25-40)%, the content (x₂) of AlAs in the second additional layer is set to (25-40)%, and in the third additional layer the content (x₃) of AlAs is set to decrease smoothly from x₃=x₂ to zero near the photoactive n-GaAs layer. The photoelectric converter also includes a Bragg reflector, which contains (15-25) pairs of alternating layers, respectively, from Al(x₄)Ga(1-x₄)As and from Al(x₅)Ga(1-x₅)As and a substrate of n-GaAs. The content of AlAs in the layers is set equal to x₄=(85-95)% and x₅=(7-13)% in alternating layers of the Bragg reflector, and the thicknesses W of the layers of the Bragg reflector are taken equal to W=(λ_rad+ψ)/4n at the value ψ set equal to the width of the spectral reflection band of the Bragg reflector, where n are the values of the refractive indices of the alternating layers of the Bragg reflector at a wavelengthλ_rad of the maximum of the converted narrow-band radiation. EFFECT: increase in the operating voltage and efficiency of the photoelectric converter by embedding three additional undoped layers into the structure: with gradual increase in AlAs content in the first layer, (25-40)% AlAs content in the second layer, and decreasing AlAs content in the third layer.

EFFECT: new design.

1 cl, 4 dwg