PSEUDOMORPHIC SWITCHING DEVICE BASED ON HETEROSTRUCTURE AlGaN/InGaN Russian patent published in 2018 - IPC H01P1/15 

FIELD: electricity.

SUBSTANCE: switching device is pseudomorphic, made on the basis of the AlGaN/InGaN heterostructure, and the capacitive element is a capacitor. In addition, the switching device includes a sapphire substrate on which are successively placed: a buffer layer of AlN, a buffer layer of GaN, a layer of undoped GaN of i-type conductivity, a superlattice of Al_XGa_1-XN/GaN, a buffer layer of GaN, heavily doped layer of n-type conductivity of Al_XGa_1-XN, a spacer of solid solution Al_XGa_1-XN, a smoothing layer of GaN, channel of a solid solution In_XGa_1-XN, and in interface of In_XGa_1-XN/AlGaN heterostructure two-dimensional electron gas (TDEG) of high density is formed, which serves as the lower plate of the capacitor. Over the solid solution In_XGa_1-XN achemically stable smoothing layer of GaN is placed, on top of which a dielectric layer of hafnium dioxide is deposited. On top of the dielectric metal strip electrodes are placed, which form the upper capacitor cover. Wherein, the capacitive element of the device is made with a minimum number of deep electronic traps (DX), and the channel is made elastic-stressed pseudomorphic with an InGa concentration of 15-25%.

EFFECT: invention ensures increase in the reliability of device, suppression efficiency for current collapse, increased switching speed and output power level, easing the process of degradation in heterostructure.

4 cl, 3 dwg