FIELD: electrical equipment.
SUBSTANCE: invention relates to semiconductor products intended for microwave control devices. Invention consists in the fact that a microwave switching device with isolated electrodes is made on graphene, where silicon is used as a substrate, then the following layers are successively placed: layer of silicon oxide (SiO2), two-dimensional layer of graphene, which serves as the lower plate of the capacitor, on top of which a combined dielectric containing an amorphous layer of aluminum oxide (Al2O3) is applied, amorphous layer of a dielectric with a high dielectric constant, for example, hafnium dioxide (HfO2), and re-amorphous layer of alumina (Al2O3), and over the dielectric there are metal electrodes of the strip form placed, which form an upper plate of at least three voltage-controlled capacitors forming a 3-electrode 2-channel configuration.
EFFECT: increase in the level of permissible input power, increase in the switching speed and reduction of input losses, improvement of the reliability of devices, increase in the level of radiation resistance.
4 cl, 3 dwg
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Authors
Dates
2018-05-07—Published
2017-05-12—Filed