FIELD: electrical engineering.
SUBSTANCE: invention relates to semiconductor microelectronics, namely to the technology of manufacture of matrix photodetectors, and can be used for formation of matrix microcontact elements for LIS reading crystals and a matrix of photosensitive elements, followed by their hybridization by reversed mounting. Aim of the invention is to reduce the impact of technological defects on matrix photodetectors quality by using new forms of contact elements and their location in the matrix, which are less sensitive to defects than known solutions. In the method of forming matrix microcontact elements on LIS reading crystals and matrix of photosensitive elements, indium microcontact elements in the matrix have not the same orientation along the matrix, and alternating, with a change in orientation by 90° each two steps in two coordinates, i.e. in a chessboard order. In this case, the distances between the nearest elements of the indium microcontact elements increase and become identical in two coordinates.
EFFECT: this leads to a decrease in a possibility of short circuits between indium microcontact elements and, consequently, increase in the percentage of yield of quality products.
1 cl, 2 dwg
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Authors
Dates
2018-05-23—Published
2017-05-31—Filed