INPUT UNIT OF SEMICONDUCTOR DEVICE Russian patent published in 2015 - IPC H01L31/00 

Abstract RU 2561312 C1

FIELD: physics.

SUBSTANCE: input unit of a semiconductor device has an entrance window and a base with a photosensitive element in a corresponding housing; the base with the photosensitive element has column supports made by photolithography, arranged around the periphery of the photosensitive element, having a height greater than the level of contact pads of the photosensitive element.

EFFECT: enabling formation of a minimal gap between the surface of the fibre-optic entrance window and the surface of the photosensitive element, thereby protecting the photosensitive element from touching with the surface of the entrance window.

2 dwg

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RU 2 561 312 C1

Authors

Plakhov Stanislav Afanas'Evich

Arutjunov Valentin Artemovich

Ilisavskaja Elena Jur'Evna

Maksimova Galina Anatol'Evna

Dates

2015-08-27Published

2014-03-06Filed