METHOD OF OBTAINING OF ARRAYS OF NANODIMENSIONAL FILAMENTARY SILICON CRYSTALS WITH CONTROLLED SURFACE DENSITY Russian patent published in 2015 - IPC C30B29/62 C30B29/06 C30B30/06 B82B3/00 B82Y30/00 B82Y40/00 C30B25/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to technology of obtaining of semiconductor nanomaterials. The method of obtaining of arrays of nanodimensional filamentary silicon crystals includes preparation of growth silicon substrate by application on its surface of nanodisperse particles of the catalyst by condensation of microdrops of colloidal solution and the placement of the prepared plate into the growth furnace with the subsequent cultivation of filamentary nanocrystals, while the colloidal solution is effected with ultrasound, and the power of the ultrasonic generator is set in the range from 30 up to 55 W, and the temperature of solution is maintained in the range from 273 K up to 370 K.

EFFECT: invention provides possibility of receiving on a surface of a substrate of massifs of filamentary nanocrystals of silicon with the operated area density without use of the hi-tech equipment.

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