HETEROSTRUCTURE PHOTOELECTRIC CONVERTER BASED ON CRYSTALLINE SILICON Russian patent published in 2017 - IPC H01L31/04 H01L31/747 

FIELD: physics.

SUBSTANCE: solar module based on crystalline silicon includes a plate of polycrystalline or monocrystalline silicon; a passivation layer in the form of amorphous hydrogenated silicon deposited on each side of the silicon plate; p-layer in the form of amorphous hydrogenated silicon deposited on the upper side of the passivation layer; N-layer applied to the underside of the passivation layer; current-collecting layers deposited on the p-layer and the n-layer. N-type metal oxides obtained by magnetron sputtering or atomic layering, or by gas-phase deposition under reduced pressure, are used as n-layer. Zinc oxide (ZnO) or SnO₂, Fe₂O₃, TiO₂, V₂O₇, MnO₂, CdO and other n-type metal oxides are used as n-type metal oxide.

EFFECT: invention allows to increase the productivity of the photoconverter manufacturing process.

2 cl, 1 dwg