FIELD: process engineering.
SUBSTANCE: invention relates to semiconductor engineering, particularly, to production of microstructure elements of electronic devices. Production of bores in monocrystalline silicon plates comprises preparation of such plate by application on its surface of fine metal particles of catalyst to be coated with a thin film of sodium tetraborate (anhydrous). Plate is placed in radiant furnace and heated. Crosswise temperature gradient of 10-100 K/cm is created and directed from plate face to rear. Atomic silicon undersaturation is created in gas phase by feeding thereon the silicon tetrachloride to effect the gas-phase etching of the plate in crystal→liquid drop→vapour manner.
EFFECT: high-quality through bores in monocrystal silicon plates.
5 ex
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