METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/318 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology of forming a gate dielectric with reduced defectiveness and with increased radiation resistance. Before deposition, the silicon plates were treated with a mixture NH₄OH and H₂O₂ with pH=9, followed by annealing in hydrogen at 500 °C. Films of silicon oxynitride 250–300 nm thick were deposited on a silicon substrate in the SiH₄-NO-NH₃ system with nitrogen as a carrier gas at a concentration NH₃=1–7 %. Silane was introduced into the silicon substrate as a 3 % mixture with nitrogen, and NO – 4 % in nitrogen. Ammonia was mixed with a stream of silane in the ratio NH₃/SiH₄=35–40, the flow rate in the reaction chamber was 1–3 l/min, followed by annealing at a temperature of 450–500 °C for 5 minutes.

EFFECT: reduction of leakage currents and increase of radiation resistance, providing processability, improving parameters, increasing reliability and increasing the percentage of yield of suitable devices.

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