SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/26 

FIELD: physics.

SUBSTANCE: invention relates to the field of the semiconductor devices production technology, in particular, to the field-effect transistor with reduced defectiveness manufacturing technology. Technology of the method is as follows: on the p-type silicon with specific resistance of 7.5 Ohm*cm wafers growing the thermal oxide layer of 0.6 mcm, on which forming the polycrystalline silicon (PC) 0.3 mcm film using the low-pressure pyrolysis. Next, performing the heat treatment for 60 minutes at temperature of 1100 °C in the nitrogen stream for the PC surface quality improvement, which affects the subsequent laser annealing result. For annealing using the continuous action argon laser. Laser beam scanning is performed at speed of 12 cm/s. Samples are heated to temperature of 350 °C. Laser power is selected to be 10–12 W. After annealing, forming the field effect transistor structures according to the standard technology.

EFFECT: technical result of the invention is reduction in defectiveness, enabling manufacturability, increase in the instruments parameters, increase in quality, and increase in the usable yield percentage.

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