METHOD OF MAKING THIN-FILM TRANSISTOR Russian patent published in 2014 - IPC H01L21/336 B82B3/00 

FIELD: chemistry.

SUBSTANCE: method of making a thin-film transistor involves depositing a layer of undoped n-type α-Si with thickness of 300 nm and a layer of phosphorus-doped n+-type microcrystalline silicon with thickness of 20 nm on a substrate of monocrystalline silicon with a thermally grown layer of silicon oxide successively by gas-phase plasma-chemical deposition at substrate temperature of 300°C; thermally forming, between the drain and gate, a layer of silicon oxide with thickness of 200 nm, which is depressed into a layer of amorphous silicon, followed by deposition of a 500 nm layer of SiO₂ by chemical vapour deposition at 250°C and firing the samples in a hydrogen atmosphere at 350°C for 30 minutes.

EFFECT: low stray current, providing processability, improved parameters, high reliability and higher output of nondefective articles.

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