SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/265 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of field-effect transistor. According to the invention, the semiconductor device manufacturing method is implemented as follows: on the p-type conductors silicon the inverse pocket is formed by implantation of phosphorus ions with energy 150 keV, dose 2.0*10¹³ cm^-2, with distillation in oxidative medium for 15 minutes at temperature of 1,150 °C and formation of a silicon dioxide layer, then in an inert medium for 45 minutes and implantation of boron through a layer of silicon dioxide with energy of 150 keV, with dose of 1.5*10¹³ cm^-2, with subsequent distillation at temperature of 1,150 °C in inert medium during 90 minutes. Active regions of the n-channel field-effect transistor and electrodes thereto are then formed according to a standard technique.

EFFECT: invention provides reduction of leakage current and prevention of "thyristor effect", as well as improved manufacturability, improved parameters of instruments, high quality and high percentage yield.

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