METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE Russian patent published in 2021 - IPC H01L21/265 H01L21/268 H01L21/324 

FIELD: electricity.

SUBSTANCE: invention relates to the field of technology of semiconductor device manufacture, particularly to the technology of manufacture of a bipolar transistor with an increased amplification factor. The method for manufacture of a semiconductor device includes formation of an epitaxial layer, collector, base and emitter areas on a silicon substrate, wherein the emitter area is formed by ion implantation of arsenic with an energy of 50 keV, a dose of 1⋅10¹⁵-1⋅10¹⁶ cm^-2, followed by laser annealing with radiation wavelength of 1.06 μm, pulse duration of 50 ns, pulse energy of 3 to 5 J/cm² in a nitrogen atmosphere with a scanning speed of 12.5 cm/s at a temperature of 150°C.

EFFECT: invention allows increasing output rate of operational devices and improving reliability thereof.

1 cl, 1 tbl