SILICON OXYNITRIDE FORMATION METHOD Russian patent published in 2022 - IPC H01L21/265 H01L21/324 

FIELD: semiconductor production technology.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices. The method for forming a field-effect transistor according to the invention includes the processes of creating a protective insulating layer of silicon oxynitride on a semiconductor substrate, active areas of the field-effect transistor and electrodes to them, while the layer of silicon oxynitride is formed by bombarding p-type silicon wafers at room temperature with nitrogen ions N⁺₂ and oxygen O⁺₂ with a total dose of ions of 1.1017-1.1018 cm-2, energy of 30 keV, at an ion beam current density of 10-15 μA/cm², followed by heat treatment in vacuum, first at a temperature of 550 900°C for 15 min.

EFFECT: invention provides an increase in the resistance of devices to the effects of hot media due to the use of a more defect-resistant material, silicon oxynitride, as gate insulators.

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