METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/338 

Abstract RU 2641617 C1

FIELD: electricity.

SUBSTANCE: in method of manufacturing semiconductor device on GaAs substrate of source/drain n+ - type area by silicon ions implementation in two stages are formed: the first stage with the energy of 40 keV, a dose of 7*1013 cm-2, the second stage with energy 100 keV, a dose of 1*1014 cm-2 and heat treatment is conducted at a temperature of 800°C in nitrogen atmosphere within 20 min.

EFFECT: reduction of contact resistance, manufacturability, improvement of parameters, improvement of quality and increase in yield percentage.

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RU 2 641 617 C1

Authors

Khasanov Aslambek Idrisovich

Mustafaev Arslan Gasanovich

Mustafaev Gasan Abakarovich

Dates

2018-01-18Published

2016-10-07Filed