METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/338 

FIELD: electricity.

SUBSTANCE: in method of manufacturing semiconductor device on GaAs substrate of source/drain n+ - type area by silicon ions implementation in two stages are formed: the first stage with the energy of 40 keV, a dose of 7*10¹³ cm^-2, the second stage with energy 100 keV, a dose of 1*10¹⁴ cm^-2 and heat treatment is conducted at a temperature of 800°C in nitrogen atmosphere within 20 min.

EFFECT: reduction of contact resistance, manufacturability, improvement of parameters, improvement of quality and increase in yield percentage.

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