FIELD: electricity.
SUBSTANCE: in method of manufacturing semiconductor device on GaAs substrate of source/drain n+ - type area by silicon ions implementation in two stages are formed: the first stage with the energy of 40 keV, a dose of 7*1013 cm-2, the second stage with energy 100 keV, a dose of 1*1014 cm-2 and heat treatment is conducted at a temperature of 800°C in nitrogen atmosphere within 20 min.
EFFECT: reduction of contact resistance, manufacturability, improvement of parameters, improvement of quality and increase in yield percentage.
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Authors
Dates
2018-01-18—Published
2016-10-07—Filed