FIELD: technological processes.
SUBSTANCE: use: to create nickel silicide. Substance of invention consists in fact that method of nickel silicide manufacturing comprises deposition of Ni nickel film with thickness of 30-50 nm in vacuum of 3*10-6 Pa with growth rate of 2 nm/s and subsequent treatment of structures with xenon Xe ions at temperature of 175 °C with energy of 300 keV, dose of 1*1015 cm-2 and annealing at temperature of 240 °C for 20 minutes in atmosphere.
EFFECT: reducing contact resistance, providing processability, improving parameters of instruments.
1 cl, 1 tbl
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RU2698540C1 |
| METHOD FOR MANUFACTURING SHALLOW JUNCTIONS | 2021 |
|
RU2757539C1 |
