METHOD FOR SEMICONDUCTING DEVICE MANUFACTURE Russian patent published in 2017 - IPC H01L21/285 

FIELD: physics, instrumentation.

SUBSTANCE: invention refers to the field of semiconductor manufacturing technology, namely to the manufacturing technology of devices with a reduced contact resistance. The method of semiconducting devices manufacture includes formation of contacts for n⁺-source/drain areas by applcation of film W by tungsten hexafluoride WF₆ reduction by gaseous H₂ at a partial H₂ pressure of 133 Pa, a temperature of 300°C, with dilution of the mixture supplied to the reactor by hydrogen in the ratio of (H₂ :WF₆> 200:1 ), with film W growth speed of 8-10 nm/min, with subsequent administration of carbon with concentration of 10¹³ cm^-3 to the W/n+Si border and annealing at a temperature of 450°C for 15 min. Introduction of carbon to the W/n+Si border prevents diffusion of Si to W. Carbon scores the grain boundaries in W and thus prevents Si to W diffusion.

EFFECT: invention provides reduced contact resistance, ensures manufacturability, provides better parameters, increases the reliability and the percentage of suitable devices yield.

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