METHOD FOR MANUFACTURING SILICIDE CONTACTS FROM TUNGSTEN Russian patent published in 2021 - IPC H01L23/485 

FIELD: semiconductor technology.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology of manufacturing contacts made of tungsten silicide with a reduced contact resistance value. The method is implemented as follows: on silicon plates of p-type conductivity with an orientation (100), a specific resistivity of 10 Ohms⋅cm, after the formation of the drain/source regions and the deposition of a layer of the gate dielectric of a field-effect transistor, a film of tungsten silicide SiW₂ is formed by electron beam evaporation with a thickness of 150 nm from two sources in a vacuum of 1⋅10^-5 Pa, with a growth rate of 0.5 nm/s for Si and 0.2 nm/s for W, followed by annealing first at a temperature of 625°C for 30 minutes, and then at a temperature of 1000°C for 20 seconds, in an inert medium. The active regions of the n-channel field-effect transistor and the electrodes to them were formed according to standard technology.

EFFECT: reducing the contact resistance, ensuring manufacturability, improving the parameters of the devices, improving the quality and increasing the percentage of the yield of suitable ones.

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