SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2021 - IPC H01L21/283 

FIELD: electricity.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the devices with reduced contact resistance manufacturing technology. On GaAs plates after formation of active regions of the semiconductor device, Pd/Ni/Ge contacts are formed by successive application in a vacuum at pressure of 10^-5 Pa of a germanium (Ge) layer with thickness of 20 nm at a deposition rate of 3 nm / s, nickel (Ni) layer with thickness of 15 nm at deposition rate of 1 nm/s, palladium layer (Pd) with thickness of 50 nm at deposition rate of 0.5 nm/s at substrate temperature of 100 °C with subsequent heat treatment at temperature 450 °C in forming gas for 2 minutes. Then Au is applied, by standard technology, with thickness of 100 nm and annealing is performed at temperature 400 °C for 30 s in hydrogen atmosphere.

EFFECT: technical result consists in reduction of contact resistance, provision of manufacturability, improvement of parameters of devices, improvement of quality and increase of percentage yield.

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