METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L21/283 

FIELD: physics.

SUBSTANCE: invention relates to the field of semiconductor production technology, namely to a technology of low-resistance silicide layers formation. The method of semiconductor devices manufacture includes formation of an amorphous layer by silicon ion implantation on the silicon plate with the energy of 50 keV and dose⋅ of 5⋅10¹⁵ cm^-2, at the substrate temperature of 25°C. Prior to the palladium layer application, the substrate is sequentially etched in nitric, sulfuric and hydrofluoric acid, then washed with deionized water. The palladium layer is applied at a temperature of 25-100°C, with a thickness of 0.1 microns at a rate of 1.5 nm/sec. After application of the palladium layer, heat-treated under vacuum is conducted at a pressure of (2-8)⋅ 105 mm Hg, temperature of 250°C for 20-30 minutes. As a result, palladium silicide Pd₂Si is formed.

EFFECT: invention reduces drag, improves process efficiency, improves parameters, improves quality and increases yield percentage.

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