FABRICATION OF CONTACT-BARRIER METALLISATION Russian patent published in 2015 - IPC H01L21/285 

FIELD: process engineering.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures of contact-barrier metallisation of instrument. Contact-barrier metallisation is produced by series application of W (15% Ti) 0.17-0.19 mcm deep film at cross-field spraying of alloyed target at the rate of 2.5 E/s and Al (1.5% Si) 0.35-0.45 mcm deep film with subsequent thermal annealing at 450-480°C for 30 minutes in the medium of nitrogen.

EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.

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