METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/336 

FIELD: instrumentation; technological processes.

SUBSTANCE: invention relates to the field of manufacturing technology of semiconductor devices, in particular, to the technology of manufacturing a gate dielectric with a low defect density. Technology of the method consists in the following: tantalum film with a thickness of 28 nm is formed on a p-type silicon wafer with orientation (100) with a deposition rate of 30 nm/min, on a substrate heated to 70 °C, in vacuum at a pressure of 10^-6–10^-7 mmHg. Carry out the oxidation in oxygen at a temperature of 530 °C for 15 min and form the oxide of tantalum Ta₂O₅ 60 nm thick, followed by thermal annealing at 700 °C in an inert atmosphere for 5 min. Improvement of the semiconductor structure parameters is due to the fact that tantalum oxide Ta₂O₅ contains electronic traps. Improved structure, reduced number of traps for charge carriers near the interface is provided. Active areas of the semiconductor device are formed in a standard way.

EFFECT: invention provides a decrease in the density of defects, an increase in processability, an improvement in the parameters of devices, an increase in quality, and an increase in the percentage of yield.

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