SEMICONDUCTOR STRUCTURE FOR PHOTO-CONDUCTING ANTENNAS Russian patent published in 2017 - IPC H01L31/304 

FIELD: radio engineering, communication.

SUBSTANCE: structure is a semiconductor epitaxial multilayer structure grown on GaAs substrate with a crystallographic (111) A orientation, consisting of alternating uniaxed GaAs matrix layers grown in the low-temperature regime and functional GaAs layers grown in the standard high-temperature regime and doped with Si atoms. The ratio of fluxes of arsenic and gallium in epitaxial growth is chosen so that in the high-temperature regime of epitaxial growth, GaAs layers exhibit a p-type conductivity. The concentration of charge carriers (in this case, holes) is controlled by the change in the thickness of silicon-doped GaAs layers grown in the standard high-temperature regime, as well as by the change in the repetition period of these layers.

EFFECT: simplification of the technological process of epitaxial growth of structures for photoconductive antennas, by eliminating the need to use an erbium source in a molecular beam epitaxy.

2 dwg