FIELD: radio engineering, communication.
SUBSTANCE: structure is a semiconductor epitaxial multilayer structure grown on GaAs substrate with a crystallographic (111) A orientation, consisting of alternating uniaxed GaAs matrix layers grown in the low-temperature regime and functional GaAs layers grown in the standard high-temperature regime and doped with Si atoms. The ratio of fluxes of arsenic and gallium in epitaxial growth is chosen so that in the high-temperature regime of epitaxial growth, GaAs layers exhibit a p-type conductivity. The concentration of charge carriers (in this case, holes) is controlled by the change in the thickness of silicon-doped GaAs layers grown in the standard high-temperature regime, as well as by the change in the repetition period of these layers.
EFFECT: simplification of the technological process of epitaxial growth of structures for photoconductive antennas, by eliminating the need to use an erbium source in a molecular beam epitaxy.
2 dwg
Title | Year | Author | Number |
---|---|---|---|
SEMICONDUCTOR STRUCTURE FOR PHOTO-CONDUCTING ANTENNAS | 2017 |
|
RU2671286C1 |
MATERIAL FOR PHOTOCONDUCTIVE ANTENNAS | 2015 |
|
RU2610222C1 |
INGAAS-BASED MATERIAL ON INP SUBSTRATES FOR PHOTO-CONDUCTING ANTENNAS | 2016 |
|
RU2657306C2 |
DESIGN OF SURFACE THZ EMITTER | 2022 |
|
RU2805001C1 |
MATERIAL FOR EFFICIENT GENERATING TERAHERTZ RADIATION | 2016 |
|
RU2650575C2 |
LAMINATED MATERIAL FOR PHOTOCONDUCTIVE ANTENNAS | 2020 |
|
RU2755003C1 |
PHOTOCONDUCTIVE ANTENNAS MANUFACTURING METHOD | 2018 |
|
RU2731166C2 |
NANOSIZE STRUCTURE WITH QUASI-ONE-DIMENSIONAL CONDUCTING TIN FIBRES IN GaAs LATTICE | 2012 |
|
RU2520538C1 |
OPTICALLY ADDRESSED SPATIAL LIGHT MODULATOR AND METHOD | 2007 |
|
RU2438152C2 |
MULTI-EPITAXIAL STRUCTURE OF DOUBLE-INJECTION HIGH-VOLTAGE HYPER-FAST RECOVERY DIODE CHIP BASED ON GALLIUM AND ARSENIC | 2011 |
|
RU2531551C2 |
Authors
Dates
2017-07-04—Published
2016-10-07—Filed