METHOD OF PREPARING SURFACE OF InSb SUBSTRATE FOR HETEROSTRUCTURE CULTIVATION BY METHOD OF MOLECULAR-BEAM EPITAXY Russian patent published in 2018 - IPC H01L21/203 H01L21/3105 

FIELD: electricity.

SUBSTANCE: in method of preparing surface of InSb substrate for heterostructure cultivation by molecular-beam by epitaxy InSb substrate surface pretreatment is carried out with the modification of the composition of residual oxide layer. Modification of the composition of residual oxide layer on the surface of substrate take place with receipt of hydrated amorphous oxide layer of oxide compounds of indium and antimony, characterized by nonstoichiometric composition - of hydrated oxide compounds enriched indium. First, the anodic oxidation of substrate with the residual oxide layer is carried out in the water-containing alkaline medium, and then the oxide layer obtained during the oxidation is removed in a water-containing acid medium. In the end, modified residual oxide layer is removed in the vacuum chamber molecular-beam epitaxy installation using substrate heat treatment.

EFFECT: ensuring reduction in the temperature at which the oxide layer is completely removed in the growth chamber of molecular beam epitaxy to less than 400 degrees.

7 cl, 1 dwg