HETEROSTRUCTURAL FIELD-EFFECT TRANSISTOR BASED ON GALLIUM NITRIDE WITH IMPROVED STABILITY OF THE CURRENT-VOLTAGE CHARACTERISTIC TO IONIZING RADIATION Russian patent published in 2018 - IPC H01L29/772 

FIELD: radio engineering; electronics.

SUBSTANCE: invention relates to radio engineering and electronics. In a heterointerface gallium nitride-based FET with improved stability of the current-voltage characteristic, including a silicon carbid substrate, a nucleating layer, a buffer layer, an AlGaN-based barrier layer, a silicon-nitride-based passivation layer, drain electrodes, gate electrodes, source electrodes, the nucleating layer is made on the basis of AlN, the buffer layer is made on the basis of gallium nitride, an additional layer of AlGaN with delta-doping is added into the barrier layer at a distance of 5–10 nm from the channel of the transistor, 5 nm thick, from the side of the buffer layer, at a distance of 10–15 nm from the transistor channel, an additional GaN layer is added with doping over the entire depth of the layer.

EFFECT: invention makes it possible to simplify the design of the transistor, to obtain an additional source of electrons for a two-dimensional gas in the channel of a field-effect transistor based on AlGaN/GaN heterostructures and to expand the channel from the buffer layer, which leads to an improvement in the stability of the current-voltage characteristics of the transistor under the conditions of effects of ionizing radiation.

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