FIELD: electricity.
SUBSTANCE: in the method of a semiconductor device manufacture, containing the drain and source areas forming, after silicon carbide layer forming, the semiconductor structures are subjected to treatment by electrons with power 6MeV, dose (1-3)⋅1018 el/cm2 with the following annealing at a temperature of 800-900°C for 30 minutes in a hydrogen atmosphere.
EFFECT: reduction of leakage current values, improving the quality and good devices yield percentage.
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